Citations
ABNT
IM, H. et al. Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer. ACS applied materials & interfaces, [s. l.], v. 14, n. 50, p. 55821–55827, 2022. DOI 10.1021/acsami.2c18393. Disponível em: https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=cmedm&AN=36480162&authtype=uid&user=rmabrowserextension&password=Br0wserExtension789! Acesso em: 2 out. 2023.
AMA 11th Edition
Im H, Ahn JH, Kim Y-S, Hong Y. Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer. ACS applied materials & interfaces. 2022;14(50):55821-55827. doi:10.1021/acsami.2c18393
APA 7th Edition
Im, H., Ahn, J. H., Kim, Y.-S., & Hong, Y. (2022). Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer. ACS Applied Materials & Interfaces, 14(50), 55821–55827. https://doi.org/10.1021/acsami.2c18393
Chicago 17th Edition
Im, Hwarim, Jeong Hyun Ahn, Yong-Sang Kim, and Yongtaek Hong. 2022. “Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer.” ACS Applied Materials & Interfaces 14 (50): 55821–27. doi:10.1021/acsami.2c18393.
Harvard
Im, H. et al. (2022) ‘Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer’, ACS applied materials & interfaces, 14(50), pp. 55821–55827. doi:10.1021/acsami.2c18393.
Harvard: Australian
Im, H, Ahn, JH, Kim, Y-S & Hong, Y 2022, ‘Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer’, ACS applied materials & interfaces, vol. 14, no. 50, pp. 55821–55827, viewed 2 October 2023, .
MLA 9th Edition
Im, Hwarim, et al. “Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer.” ACS Applied Materials & Interfaces, vol. 14, no. 50, Dec. 2022, pp. 55821–27. EBSCOhost, https://doi.org/10.1021/acsami.2c18393.
Chicago 17th Edition
Im, Hwarim, Jeong Hyun Ahn, Yong-Sang Kim, and Yongtaek Hong. “Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer.” ACS Applied Materials & Interfaces 14, no. 50 (December 21, 2022): 55821–27. doi:10.1021/acsami.2c18393.
Vancouver/ICMJE
Im H, Ahn JH, Kim Y-S, Hong Y. Effect of Back-Channel Surface on Reliability of Solution-Processed In 0.51 Ga 0.15 Zn 0.34 O Thin-Film Transistors with Thin Active Layer. ACS applied materials & interfaces [Internet]. 2022 Dec 21 [cited 2023 Oct 2];14(50):55821–7. Available from: https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=cmedm&AN=36480162&authtype=uid&user=rmabrowserextension&password=Br0wserExtension789!