Advanced Search Results For "Latkowska, Magdalena"
Your filters
Laparoscopic Living Donor Nephrectomy—Single-Center Initial Experience
Publication Type: Academic Journal
Source(s): Uro, Vol 2, Iss 23, Pp 191-198 (2022)
Abstract: (1) Background: Donor nephrectomy for living donor kidney transplantation using minimally invasive techniques is a safe procedure that has been used for more than 20 years with excellent results. The total laparoscopic approach offers decreased postope...
The Rich Diversity of Urban Allotment Gardens in Europe: Contemporary Trends in the Context of Historical, Socio-Economic and Legal Conditions
Publication Type: Academic Journal
Source(s): Sustainability, Vol 13, Iss 11076, p 11076 (2021)
Abstract: Urban allotment gardens (AGs) provide a unique combination of productive and recreational spaces for the inhabitants of European cities. Although the reasons behind the decision to have a plot, as well as the mode of use and gardening practices, are we...
Sozialismus-Pädagogen" und Gewissen der Nation" Schriftsteller aus der DDR und der BRD über die Berliner Mauer.
Publication Type: Academic Journal
Source(s): Journal of the Polish Association for German Studies / Zeitschrift des Verbandes Polnischer Germanisten / Czasopismo Stowarzyszenia Germanistów Polskich. 2014, Vol. 3 Issue 3, p231-239. 9p.
Abstract: The article is devoted to the attitude of writers from the GDR and the FRG to the construction and the fall of the Berlin Wall. The reactions in the RFG were varied, but there prevailed protest and indignation with the situation, whereas the GDR writer...
AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
Publication Type: Academic Journal
Source(s): International Journal of Electronics & Telecommunications; Jun2014, Vol. 60 Issue 2, p151-156, 6p
Abstract: Copyright of International Journal of Electronics & Telecommunications is the property of Polish Academy of Sciences and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written p...
Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application.
Publication Type: Conference
Source(s): Ninth International Conference on Advanced Semiconductor Devices & Mircosystems; 1/ 1/2012, p123-126, 4p
Abstract: Copyright of Ninth International Conference on Advanced Semiconductor Devices & Mircosystems is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written p...
Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
Publication Type: Periodical
Source(s): Japanese Journal of Applied Physics; August 2013, Vol. 52 Issue: 8 p08JL10-08JL15, 6p
Abstract: Various multiple quantum well structures with three main geometries of triangular, isosceles trapezoidal, and right-angled trapezoidal shape have been designed and fabricated on 4-in. sapphire substrates by metal organic vapor phase epitaxy. Photolumin...
Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells
Publication Type: Periodical
Source(s): Proceedings of SPIE; July 2013, Vol. 8902 Issue: 1 p89022G-89022G-7, 801206p
Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications
Publication Type: Periodical
Source(s): Proceedings of SPIE; July 2013, Vol. 8902 Issue: 1 p89020J-89020J-8, 801189p
The Political Role of East- and West-German Writers Before and After 1989.
Publication Type: Academic Journal
Source(s): Debatte: Review of Contemporary German Affairs; Aug2010, Vol. 18 Issue 2, p223-236, 14p
Abstract: Copyright of Debatte: Review of Contemporary German Affairs is the property of Routledge and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users ma...
Direct evidence of photoluminescence broadening enhancement by local electric field fluctuations in polar InGaN/GaN quantum wells
Publication Type: Periodical
Source(s): Japanese Journal of Applied Physics; September 2018, Vol. 57 Issue: 2 p020305-020305, 1p
Abstract: In this work the effect of external electric field on the broadening of optical transitions in a triple polar InGaN/GaN quantum well is studied. Experimental investigation using photoluminescence and electroreflectance show that the reduction of the in...