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Advanced Search Results For "Pan, Guanzhong"

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 "Pan, Guanzhong"
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Extrinsic Parasitics and Design Considerations on Modulation Bandwidth of 850-nm Vertical Cavity Surface Emitting Lasers.

Publication Type:Academic Journal

Source(s):IEEE Transactions on Electron Devices; Sep2022, Vol. 69 Issue 9, p4992-4997, 6p

Abstract:Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, downl...

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High-Compactness Bessel Beam Emitters Based on Vertical-Cavity Surface-Emitting Lasers.

Publication Type:Academic Journal

Source(s):IEEE Transactions on Electron Devices; May2022, Vol. 69 Issue 5, p2508-2513, 6p

Abstract:Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, downl...

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Speculation or hedging?—Options trading prior to FOMC announcements.

Publication Type:Academic Journal

Source(s):Journal of Futures Markets; Feb2022, Vol. 42 Issue 2, p212-230, 19p

Abstract:Copyright of Journal of Futures Markets is the property of John Wiley & Sons, Inc. and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may prin...

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Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics

Publication Type:Academic Journal

Source(s):APL Materials, Vol 6, Iss 2, Pp 026802-026802-8 (2018)

Abstract:A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces e...

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The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Publication Type:Academic Journal

Source(s):Nanomaterials, Vol 9, Iss 11, p 1633 (2019)

Abstract:Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst su...

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High Slope Efficiency Bipolar Cascade 905nm Vertical Cavity Surface Emitting Laser.

Publication Type:Academic Journal

Source(s):IEEE Electron Device Letters; Sep2021, Vol. 42 Issue 9, p1342-1345, 4p

Abstract:Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or e...

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190 °C High-Temperature Operation of 905-nm VCSELs With High Performance.

Publication Type:Academic Journal

Source(s):IEEE Transactions on Electron Devices; Jun2021, Vol. 68 Issue 6, p2829-2834, 6p

Abstract:Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, downl...

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Graphene-assisted preparation of large-scale single-crystal Ag(111) nanoparticle arrays for surface-enhanced Raman scattering.

Publication Type:Academic Journal

Source(s):Nanotechnology; Jan2021, Vol. 32 Issue 2, p1-8, 8p

Abstract:Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email...

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Analysis of Thermal Properties of 940-nm Vertical Cavity Surface Emitting Laser Arrays.

Publication Type:Academic Journal

Source(s):IEEE Transactions on Electron Devices; Jan2021, Vol. 68 Issue 1, p158-163, 6p

Abstract:Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, downl...

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