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Advanced Search Results For "MILLIMETER wave transistors"

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 "MILLIMETER wave transistors"
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Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Publication Type: Academic Journal

Source(s): IEEE Access, Vol 10, Pp 92381-92389 (2022)

Abstract: In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circ...

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Publication Type: Academic Journal

Source(s): IEEE Journal of the Electron Devices Society, Vol 10, Pp 424-434 (2022)

Abstract: Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, P...

The Impact of Interference From the Side Lanes on mmWave/THz Band V2V Communication Systems With Directional Antennas.

Publication Type: Academic Journal

Source(s): IEEE Transactions on Vehicular Technology. Jun2018, Vol. 67 Issue 6, p5028-5041. 14p.

Abstract: Communications systems operating in the millimeter-wave (mmWave) and terahertz (THz) band have been recently suggested to enable high data-rate vehicle-to-vehicle (V2V) communications in 5G and beyond wireless networks. However, massive deployment of s...

A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique

Publication Type: Academic Journal

Source(s): Electronics, Vol 11, Iss 2716, p 2716 (2022)

Abstract: This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, a series inductor-based stability enhancement technique w...

Semiconductor technologies for 5G implementation at millimeter wave frequencies – Design challenges and current state of work

Publication Type: Academic Journal

Source(s): Engineering Science and Technology, an International Journal, Vol 24, Iss 1, Pp 205-217 (2021)

Abstract: Almost all cellular mobile communications of today take place in sub 3 GHz band that has now become too crowded to support future demands of increasing mobile data traffic. Therefore a new paradigm has been explored for designing next generation cellul...

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

Publication Type: Academic Journal

Source(s): IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 288-298 (2021)

Abstract: This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advan...

Composite Right- and Left-Handed Traveling-Wave Field-Effect Transistors.

Publication Type: Academic Journal

Source(s): Active & Passive Electronic Components. 2012, p1-7. 7p. 3 Diagrams, 1 Chart, 8 Graphs.


Abstract: We introduce a composite right- and left-handed travelling-wave field-effect transistor (CRLH TWFET) for developing large-scale platform to support left-handed waves. The device represents two electromagnetically coupled CRLH transmission lines by capa...

Large-signal distributed millimeter-wave multifinger pHEMT modeling using time-domain technique.

Publication Type: Academic Journal

Source(s): International Journal of RF & Microwave Computer-Aided Engineering. Sep2017, Vol. 27 Issue 7, pn/a-N.PAG. 15p. 3 Diagrams, 2 Charts, 6 Graphs.

Abstract: The finite-difference time-domain (FDTD) method is used for the large-signal modeling of a multifinger pHEMT, which is considered as five nonlinear coupled distributed transmission lines. The developed model, which is based on the exact physical layout...

Millimeter-Wave GaN HEMTs With Cavity-Gate Structure Using MSQ-Based Inter-Layer Dielectric.

Publication Type: Academic Journal

Source(s): IEEE Transactions on Semiconductor Manufacturing. Nov2016, Vol. 29 Issue 4, p370-375. 6p.

Abstract: We have fabricated millimeter-wave gallium nitride high electron mobility transistors (GaN HEMTs) using methyl silsesquioxane (MSQ)-based inter-layer dielectric to suppress current collapse by enhancing the moisture resistance, and removed MSQ around t...

Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

Publication Type: Academic Journal

Source(s): IEEE Access, Vol 8, Pp 12697-12712 (2020)

Abstract: This paper reports on the monolithic integration of layout-optimized Schottky diodes realized in an established 50-nm gate-length metamorphic high-electron-mobility transistor technology for use in multifunctional nonlinear circuits. The suitability of...