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Analytical Approach to Improve the Performance of a Fully Integrated Class-F Power Amplifier with 0.13 µm BiCMOS Technology Using Drain–Bulk Capacitor Modulation.
Publication Type: Academic Journal
Source(s): Electronics (2079-9292). Jul2023, Vol. 12 Issue 13, p2784. 16p.
Abstract: This article reports a novel technique based on drain–bulk capacitor modulation to improve the performance design of a class-F power amplifier (PA) used in low-power transceivers based on the I-Q amplitude modulation technique considering linearity–eff...
Enhanced Yb:YAG Active Mirrors for High Power Laser Amplifiers.
Publication Type: Academic Journal
Source(s): Photonics. Jul2023, Vol. 10 Issue 7, p849. 13p.
Abstract: The work is aimed at the investigation of the influence of nonlinear active ions concentration profiles in Yb:YAG laser elements on temperature distribution and wavefront distortions during amplification using sub-kilowatt level diode pumping. A mathem...
A 110 GHz Feedback Amplifier Design Based on Quasi-Linear Analysis.
Publication Type: Academic Journal
Source(s): Electronics (2079-9292). Sep2023, Vol. 12 Issue 17, p3725. 14p.
Abstract: The power gain and output power of millimeter-wave (mm-Wave) and terahertz (THz) amplifiers are critical performance metrics, particularly when the operating frequencies of amplifiers are near to the maximum oscillator frequency ( f m a x ) of the tran...
A Ka -Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications.
Publication Type: Academic Journal
Source(s): Electronics (2079-9292). Sep2023, Vol. 12 Issue 17, p3639. 11p.
Abstract: This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power split...
High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands.
Publication Type: Academic Journal
Source(s): Electronics (2079-9292). Aug2023, Vol. 12 Issue 16, p3494. 15p.
Abstract: This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors' 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology w...
Research on communication emitter identification based on semi-supervised dimensionality reduction in complex electromagnetic environment.
Publication Type: Academic Journal
Source(s): Bulletin of the Polish Academy of Sciences: Technical Sciences. Aug2023, Vol. 71 Issue 4, p1-11. 11p.
Abstract: The individual identification of communication emitters is a process of identifying different emitters based on the radio frequency fingerprint features extracted from the received signals. Due to the inherent non-linearity of the emitter power amplifi...
13.5 μJ, 20 kHz Repetition Rate, Single Frequency Pr 3+ :YLF Master Oscillator Power Amplifier System.
Publication Type: Academic Journal
Source(s): Photonics. Aug2023, Vol. 10 Issue 8, p903. 10p.
Abstract: This article describes a master oscillator and power amplifier (MOPA) system with a single longitudinal mode (SLM) and high-repetition-frequency Pr3+:YLF active medium that was end-pumped by two 444 nm laser diodes. The Pr3+:YLF MOPA laser system produ...
A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems.
Publication Type: Academic Journal
Source(s): Micromachines. Aug2023, Vol. 14 Issue 8, p1551. 40p.
Abstract: Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a g...
A Dual Load-Modulated Doherty Power Amplifier Design Method for Improving Power Back-Off Efficiency.
Publication Type: Academic Journal
Source(s): Sensors (14248220). Jul2023, Vol. 23 Issue 14, p6598. 14p.
Abstract: In this paper, the load modulation process of a Doherty power amplifier (DPA) is analyzed to address the issue of why designed DPAs have a very low efficiency in the back-off state in some cases. A general formula of the real load modulation process is...
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation.
Publication Type: Academic Journal
Source(s): Electronics (2079-9292). Jul2023, Vol. 12 Issue 13, p2939. 18p.
Abstract: In this paper, we experimentally investigate the effects of degradation observed on 0.15-µm GaN HEMT devices when operating under realistic power amplifier conditions. The latter will be applied to the devices under test (DUT) by exploiting a low-frequ...